MM and T Program for the Establishment of Production Techniques for High Power Bulk Semiconductor Limiters.
Quarterly rept. no. 5, 23 Jun-22 Sep 77,
MICROWAVE ASSOCIATES INC BURLINGTON MASS
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X-band bulk limiters of 3.5 mils in thickness have been fabricated using high resistivity silicon rho 12,000 to 18,000 ohm-cm, P-type uncompensated 111 orientation. These bulk limiters exhibit 3 dB bandwidth of 0.6 to 0.8 GHz and power handling capability of 20- 30 kW. As a cost reduction measure, low cost stamped X-band copper irises have been introduced for mounting the bulk limiter chips. This would substantially lower the price of bulk limiter assembly. Various parameters are being optimized to achieve both bandwidth and RF power goals of the contract. Author
- Electrical and Electronic Equipment
- Solid State Physics