Accession Number:

ADA055925

Title:

Radiation Effects on MOS/SOS Semiconductor Devices.

Descriptive Note:

Contractor rept.,

Corporate Author:

PRINCETON UNIV N J MATERIALS LAB

Personal Author(s):

Report Date:

1978-05-01

Pagination or Media Count:

51.0

Abstract:

Measurement have been made on radiation induced leakage currents in MOSSOS structures and the effects of optical bleaching and further irradiation under zero bias conditions have been studied. In order to understand the role played by bulk traps in Al2O3 in the radiation induced leakage currents and to identify the possible lattice defects associated with these traps, Thermally Stimulated Current Techniques have been employed on samples of single crystal Al2O3 from various sources. Optical bleaching and trap repopulation studies have been made in conjunction with the thermally stimulated current measurements. A review of data on trapping states in Al2O3 is presented and models for the trapping and charge compensation processes involved in the back channel leakage are discussed. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE