Photodiode Design Study.
Final rept. May-Dec 77,
RESEARCH TRIANGLE INST RESEARCH TRIANGLE PARK N C
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The purpose of this work was to apply the analytical method developed for single junction and multijunction solar cells, Contract No. F33615-76-C-1283, to photodiodes and avalanche photodiodes. It was anticipated that this analytical method will advance the state-of-the-art because of the following 1 the analysis considers the total photodetector multilayer structure rather than just the depleted region 2 a model of the complete band structure is analyzed 3 application of the integral form of the continuity equation is used 4 structures that reduce dark current andor increase the ratio of photocurrent to dark current are obtained and 5 structures that increase spectral response in the depleted region and reduce response in other regions of the diode are obtained. The integral form of the continuity equation developed for solar cells is the steady-state or time-independent form. The contract specified that the time-independent equation would only be employed to determine applicability to photodetectors. The GaAsSb photodiode under development at Rockwell International, Thousand Oaks, California was used to determine the applicability to photodetectors. The diode structure is composed of four layers grown on a substrate. The analysis in Section 5.0 presents calculations of spectral response. This parameter is used in this study to optimize the structure.
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- Solid State Physics