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Magnetoresistance and Hall Measurement of Ultra-Pure Silicon.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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Experimental equipment was designed and built to allow automated galvanomagnetic data acquisition on semiconductor samples with resistances up to ten to the 12th power ohms. Hall and magnetoresistance data was taken on one p-type silicon sample with Boron impurity partially compensated by Phosphorus. Data was taken in a temperature range of 23 deg Kelvin to 105 Kelvin with magnetic-field strengths up to 20 Kilogauss. Magnetic-field direction was 111 and current in the sample was 110 or equivalent. Results showed that a 40-microvolt noise level in equipment amplifiers obliterated most weak-field data, and possible sample inhomogeneity caused unpredicted strong-field data trends.
APPROVED FOR PUBLIC RELEASE