Accession Number:

ADA055249

Title:

Monolithic 20W 2GHz Transistor and Monolithic 5W 4GHz Transistor.

Descriptive Note:

Quarterly rept. no. 2, 14 Sep-13 Dec 77,

Corporate Author:

TRW INC LAWNDALE CALIF SEMICONDUCTOR DIV

Personal Author(s):

Report Date:

1978-01-01

Pagination or Media Count:

20.0

Abstract:

Wire bonding experiments on existing microwave dice were performed to determine optimum bonding configurations for microwave transistors. The results of these experiments guided the design of the active portion of the monolithic 2 GHz device, the L-10. To define a 4 GHz material specification, several lots of 4GHz dice are being processed. The results of experiments on epitaxial resistivity and profile will guide the specification of PIN epitaxial material for the 4GHz portion of the program. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE