Accession Number:

ADA055198

Title:

Deep Level Trap Spectroscopy of Gallium Arsenide.

Descriptive Note:

Master's thesis,

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING

Personal Author(s):

• Mayo,Clarence E.

Report Date:

1978-03-01

Pagination or Media Count:

82.0

Abstract:

Trapping states in epitaxial GaAs induced by 1 MeV electron irradiation were measured by transient capacitance. N-type epitaxial GaAs samples with buffer layer were irradiated at room temperature with 1 MeV electrons, at doses ranging from 10 to the 14th powersq.cm to 10 to the 16th powersq.cm. Carrier removal, changes of concentration profile, diode behavior, and C-V characteristics were measured as a function of electron dose. Transient capacitance spectroscopy techniques were used to measure deep trapping levels between 4 K and 450 K. Concentrations of trapping states as a function of electron dose were measured and related to the carrier concentration measurements. The usual electron-induced trapping states with significant variations were noted. Variations of spatial depth of the traps as a function of irradiation and thermal cycling were observed. Samples were in the form of FET test patterns for correlation of material properties and device performance. Author

Descriptors:

• *GALLIUM ARSENIDES
• *TRAPPING(CHARGED PARTICLES)
• *ELECTRONIC STATES
• *ELECTRON IRRADIATION
• TRANSIENTS
• THESES
• EPITAXIAL GROWTH
• FIELD EFFECT TRANSISTORS
• CRYSTAL DEFECTS
• CAPACITANCE
• ELECTRON MOBILITY
• DEFECT ANALYSIS

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE