Electrical Profiling of Magnesium Implanted Gallium Phosphide.
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING
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Differential Hall measurements by the van der Pauw technique were taken to provide a profile of the electrically active carriers in ion implanted GaP. The study was limited to magnesium implants at room temperature at an implant energy of 129 KeV. Annealing was done in a flowing argon atmosphere at 900 C. The profiles indicated a decreasing carrier density as the depth increased. The peak of the profile was at or near the surface. In none of the cases observed were the results as predicted by the LSS theory. They were, however, much in accordance with the theory developed by Large and Bicknel for low energy implants. Glow Discharge Optical Spectrography GDOS profiles taken also indicated the same type of carrier distribution. Temperature dependence and cap dependence tests were also carried out. The results indicated that pyrolytically deposited Si3N4 annealed at 900 C provided the best percentage of type conversion. Author
- Electricity and Magnetism
- Solid State Physics