Modeling of III-V Field Effect Transistors.
Final Scientific rept. 1 Oct 76-30 Sep 77,
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The III-V field effect transistors were modeled using a time domain two-dimensional computer program. The device dynamics were deduced from the large signal time step impulse response. The computed cut-off frequency and intrinsic switching delay time as functions of gate length agree well with published data. The detailed internal carrier and potential distribution indicate persistent Gunn oscillation and significant current flow in the substrate for device with small gate length to channel width ratio LGd4. The substrate current explains the experimental soft pinch-off of short gate LG or 14 micrometers Tailoring of doping profile along the gate-length direction can significantly increase the cut-off frequency. Author
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