Accession Number:

ADA053808

Title:

Modeling of III-V Field Effect Transistors.

Descriptive Note:

Final Scientific rept. 1 Oct 76-30 Sep 77,

Corporate Author:

GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY N Y

Personal Author(s):

Report Date:

1978-03-01

Pagination or Media Count:

33.0

Abstract:

The III-V field effect transistors were modeled using a time domain two-dimensional computer program. The device dynamics were deduced from the large signal time step impulse response. The computed cut-off frequency and intrinsic switching delay time as functions of gate length agree well with published data. The detailed internal carrier and potential distribution indicate persistent Gunn oscillation and significant current flow in the substrate for device with small gate length to channel width ratio LGd4. The substrate current explains the experimental soft pinch-off of short gate LG or 14 micrometers Tailoring of doping profile along the gate-length direction can significantly increase the cut-off frequency. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Test Facilities, Equipment and Methods
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE