Accession Number:

ADA053697

Title:

The Construction of a Diffused Semiconductor Laser Diode.

Descriptive Note:

Technical rept.,

Corporate Author:

WEAPONS RESEARCH ESTABLISHMENT SALISBURY (AUSTRALIA)

Personal Author(s):

Report Date:

1977-03-01

Pagination or Media Count:

25.0

Abstract:

This report describes some of the work undertaken by the author during a four months secondment to the Quantum Electronics Group of the Australian Post Office now Telecom Australia Research Laboratories in Melbourne. The secondment was arranged to provide an introduction to solid state device technology and to allow familiarisation with the methods of processing semiconductor material. The various procedures necessary for fabricating the simplest type of semiconductor laser, that with a diffused homojunction in the III-V compound semiconductor gallium arsenide, were investigated and are reported here. Certain practical difficulties are also highlighted, and these must be resolved before more advanced devices can be achieved. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE