Accession Number:

ADA053663

Title:

New Passivation Methods of GaAs.

Descriptive Note:

Final technical rept. Jan 77-Jan 78,

Corporate Author:

NEWCASTLE-UPON-TYNE UNIV (ENGLAND) DEPT OF ELECTRICAL AND ELECTRONIC ENGINEERING

Report Date:

1978-01-01

Pagination or Media Count:

74.0

Abstract:

Detailed measurement of compositional profiles for anodically grown native oxides were undertaken using E.S.C.A. The results reported here show in particular intersting features near the interface. Accurate measurements of thickness-overvoltage characteristics show no observable space charge effects involved in the anodic growth mechanism. Conditions under which porous oxides may be formed have been investigated. Activation energies for the long-term resistance stability of native oxides were obtained. properties of thin anodic films are reported and the previously reported M.A.O.S. structure has now been successfully used to fabricate long-term information storage M.A.O.S.F.E.Ts. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE