New Passivation Methods of GaAs.
Final technical rept. Jan 77-Jan 78,
NEWCASTLE-UPON-TYNE UNIV (ENGLAND) DEPT OF ELECTRICAL AND ELECTRONIC ENGINEERING
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Detailed measurement of compositional profiles for anodically grown native oxides were undertaken using E.S.C.A. The results reported here show in particular intersting features near the interface. Accurate measurements of thickness-overvoltage characteristics show no observable space charge effects involved in the anodic growth mechanism. Conditions under which porous oxides may be formed have been investigated. Activation energies for the long-term resistance stability of native oxides were obtained. properties of thin anodic films are reported and the previously reported M.A.O.S. structure has now been successfully used to fabricate long-term information storage M.A.O.S.F.E.Ts. Author
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems
- Solid State Physics