Accession Number:

ADA053622

Title:

Damage Profiles in Silicon and their Impact on Device Reliability

Descriptive Note:

Technical rept. no. 2, 1 Apr-30 Sep 1977

Corporate Author:

IBM CORP HOPEWELL JUNCTION NY EAST FISHKILL LABS

Personal Author(s):

Report Date:

1977-09-01

Pagination or Media Count:

109.0

Abstract:

The influence of oxygen on the minority carrier lifetime of silicon is reported. Bulk annealed, oxygen-rich crystals subsequently sliced into wafers show lifetime degradation with annealing time. Silicon oxide precipitates and punched out dislocation loops induced during annealing are identified as electrically active defects responsible for the observed lifetime degradation. Increase in device yields diodes and improved lifetime in epitaxial films obtained with oxygen-rich wafers as substrates are a result of intrinsic gettering of oxygen-rich wafers. It is shown that external gettering can not improve minority carrier lifetime in silicon wafers if during processing intrinsic gettering is activated. It also shows that external gettering such as impact sound stressing ISS is very effective in improving lifetime for wafers not containing intrinsic gettering sources.

Subject Categories:

  • Electrical and Electronic Equipment
  • Ceramics, Refractories and Glass
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE