Accession Number:

ADA053538

Title:

Damage Profiles in Silicon and Their Impact on Device Reliability

Descriptive Note:

Technical rept. no. 1, 15 Oct 1976-31 Mar 1977

Corporate Author:

IBM CORP HOPEWELL JUNCTION NY EAST FISHKILL LABS

Personal Author(s):

Report Date:

1977-03-01

Pagination or Media Count:

51.0

Abstract:

N-type Si was implanted with 200 keV Cs with doses ranging from 10 to the 13th power to 10 to the 15th power ionssq cm. After nitrogen anneal MOS capacitors were formed by thermal oxidation and Al deposition. Transmission electron microscopy was used to study the residual ion damage.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE