Damage Profiles in Silicon and Their Impact on Device Reliability
Technical rept. no. 1, 15 Oct 1976-31 Mar 1977
IBM CORP HOPEWELL JUNCTION NY EAST FISHKILL LABS
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N-type Si was implanted with 200 keV Cs with doses ranging from 10 to the 13th power to 10 to the 15th power ionssq cm. After nitrogen anneal MOS capacitors were formed by thermal oxidation and Al deposition. Transmission electron microscopy was used to study the residual ion damage.
- Solid State Physics