Electrical Properties of Pb0.8Sn0.2Te Epitaxial Films.
NAVAL SURFACE WEAPONS CENTER WHITE OAK LAB SILVER SPRING MD
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The temperature dependences of the Hall coefficient and resistivity of Pb0.8Sn0.2Te epitaxial films have been measured from 4.2 to 300K. The results show that no appreciable strain is induced in the epitaxial films grown on BaF2 substrates because of differential thermal contraction below room temperature. Author
- Electricity and Magnetism
- Solid State Physics