Accession Number:

ADA053308

Title:

Characterization of III-V Materials. Annual Summary Report, 1 October 1976 to 30 September 1977,

Descriptive Note:

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON D C

Personal Author(s):

Report Date:

1978-02-01

Pagination or Media Count:

109.0

Abstract:

A program for the characterization of bulk and epitaxial single crystals of III-V compounds is described. The program includes electrical, chemical, structural and topographic characterization as well as device fabrication and evaluation, and is carried out on a co-ordinated basis by three Navy laboratories The Naval Research Laboratory, the Naval Surface Weapons Center, and the Naval Ocean Systems Center. The primary goals of the effort continue to be 1 To provide rapid and interactive feedback of routine characterization information to the materials growth effort, and 2 to develop new, innovative methods for materials characterization. Characterization techniques described include routine Hall effect measurements, photoconductivity, contactless microwave magnetoconductivity, contactless infrared optical measurements, photoluminescence of bulk and interface states, and fabrication and test of Schottky barrier field effect transistors. Results achieved with these techniques on GaAs and InP materials produced in-house and provided by commercial laboratories are described. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Electricity and Magnetism
  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE