Accession Number:

ADA053116

Title:

Impurity and Defect Behavior in High-Purity Epitaxial GaAs

Descriptive Note:

Interim rept. 1 Jan-31 Dec 1977

Corporate Author:

WASHINGTON UNIV ST LOUIS MO

Personal Author(s):

Report Date:

1977-12-31

Pagination or Media Count:

6.0

Abstract:

This report summarizes research performed in an effort to obtain a better understanding of impurity and defect behavior in epitaxial GaAs. This work includes the identification of residual defects, the development of a model for impurity incorporation, and an examination of impurity gradient effects.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE