Profiling of GaAs Using a Distributed RC Structure.
Final rept. 1 Jun-31 Dec 77,
NEW MEXICO UNIV ALBUQUERQUE DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
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The objective of this research was to compare the results of an experiment using a distributed RC structure to evaluate both the impurity profile and mobility of ion-implanted layers in GaAs with the results of the differential Hall-effect technique for the same type of samples. The distributed RC structure experiments were to be performed at The University of New Mexico UNM and the differential Hall-effect experiments were to be performed at AFAL-DHR at WPAFB. The theory of the distributed RC technique is presented in the Appendix. Author
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