Accession Number:

ADA052597

Title:

Profiling of GaAs Using a Distributed RC Structure.

Descriptive Note:

Final rept. 1 Jun-31 Dec 77,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s):

Report Date:

1978-01-01

Pagination or Media Count:

22.0

Abstract:

The objective of this research was to compare the results of an experiment using a distributed RC structure to evaluate both the impurity profile and mobility of ion-implanted layers in GaAs with the results of the differential Hall-effect technique for the same type of samples. The distributed RC structure experiments were to be performed at The University of New Mexico UNM and the differential Hall-effect experiments were to be performed at AFAL-DHR at WPAFB. The theory of the distributed RC technique is presented in the Appendix. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE