Accession Number:

ADA052413

Title:

The Influence of Contact Conditions and Circuit on Short Negative Differential Mobility Semiconducting Devices.

Descriptive Note:

Final rept. 1 Jan 74-31 Dec 77,

Corporate Author:

UNITED TECHNOLOGIES RESEARCH CENTER EAST HARTFORD CONN

Personal Author(s):

Report Date:

1977-01-01

Pagination or Media Count:

79.0

Abstract:

The nonlinear semiconducting gallium arsenide metal-semiconductor field effect transistor has been described at the recent Cornell University Electrical Engineering Conference as the most active area of research in the microwave device field for the past five years. The reason given for this activity is that as a low noise device over the frequency range of 4-20 GHz it demonstrates higher gain and lower noise than any other device. Secondly, as a power device the GaAs FET is similar in power but with higher gain when compared to silicon bipolar transistors over the frequency range of 4-6 GHz. It exceeds that of silicon at higher frequencies. Thirdly, it is a broadband device. In this important area of microwave device research, we have developed, under ONR sponsorship, a reliable time dependent transient simulation of nonlinear semiconducting FETS. An important aspect of the study is that the solutions are self-consistent and include the crucial influence of the external circuit.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE