Heterojunction Gate GaAs FET Study.
Final rept. 23 Aug 76-23 Aug 77,
VARIAN ASSOCIATES PALO ALTO CALIF CORPORATE SOLID STATE LAB
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This project is aimed at developing the technology to fabricate A1.5Ga.5As gate GaAs FETs with submicron gate dimensions and to compare the dc, large-signal switching and small-signal microwave performance of both normally-on and normally-off devices with similar Schottky-barrier devices. Author
- Electrical and Electronic Equipment
- Solid State Physics