Accession Number:

ADA052292

Title:

Heterojunction Gate GaAs FET Study.

Descriptive Note:

Final rept. 23 Aug 76-23 Aug 77,

Corporate Author:

VARIAN ASSOCIATES PALO ALTO CALIF CORPORATE SOLID STATE LAB

Report Date:

1977-10-01

Pagination or Media Count:

79.0

Abstract:

This project is aimed at developing the technology to fabricate A1.5Ga.5As gate GaAs FETs with submicron gate dimensions and to compare the dc, large-signal switching and small-signal microwave performance of both normally-on and normally-off devices with similar Schottky-barrier devices. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE