Accession Number:

ADA052291

Title:

Liquid Phase Epitaxy of GaAsSb on InP Substrates.

Descriptive Note:

Final rept. 1 Oct-31 Dec 76,

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE

Personal Author(s):

Report Date:

1977-07-31

Pagination or Media Count:

37.0

Abstract:

The Ga-As-Sb system is shown to exhibit immiscibility-like behavior, i. e., certain solid compositions do not exist, for growth from ternary melts in spite of the fact that the pseudobinary system is fully miscible. The ternary melt miscibility gap narrows with increasing growth temperature and disappears above a certain temperature but even then the solid composition remains a very sensitive function of the growth temperature.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE