Electronic and Optical Properties of SbSBr, SbSI and SbSeI.
CALIFORNIA UNIV DAVIS
Pagination or Media Count:
Electronic band structures of the ternary semiconductors SbSBr, and SbSeI have been obtained by using the empirical pseudopotential method EPM to fit our measured optical reflectivity data and earlier gap measurements. An SbSI band structure has been determined by fitting to earlier reflectivity and Raman spectroscopic data, and the results agree better with the data than do the results of an earlier preliminary EPM calculation. Above the SbSI conduction band minimum are secondary minima located midway along the Gamma 2 and Gamma X symmetry lines. These minima may in part be responsible for the observed microwave oscillation Gunn effect in this crystal. Similar minima in SbSBr and SbSeI are reported, suggesting these crystals might also show microwave properties. The total densities of states are presented. Author
- Solid State Physics