The Structural Characteristics of Radiation Damage Produced by High Energy (2.7 MeV) Ion Implantation in GaAs.
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF MATERIALS SCIENCE
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Ion implantation of dopant atoms has now been successfully employed to produce both p-type and n-type layers on GaAs substrates. High energy implantation, however, introduces considerable damage to the host lattice, the extent of which is determined by the mass, energy and dose of the implanted ions the mass of the target atoms as well as the temperature of the target. In extreme cases, the atomic disorder in the implanted region can be sufficiently great as to cause crystalline-to-amorphous transitions to occur. Any impurity conduction effect arising from the electrical doping characteristics of the implanted ion is generally completely masked by the damage. Therefore the damage must be annealed out by appropriate post-implantation heat treatment which will reduce the residual defects to a level where carrier mobilities and lifetimes are usefully large and the implanted ions will be incorporated into electrically active sites in the crystal lattice. Thus, it is of great interest to study the nature of implantation induced damage as a function of implantation conditions and the recovery of the damage during post implantation annealing.
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics