Accession Number:

ADA051973

Title:

Stannic Oxide Semiconductor Studies.

Descriptive Note:

Final scientific rept.,

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1978-02-15

Pagination or Media Count:

11.0

Abstract:

High quality stannic oxide epilayers were grown in TiO2 substrates without evidence of thermal mismatch. Electrical characterization was performed and device applications were studied. Stannic oxide appears to be suitable for high temperature microwave Schottky barrier field effect transistors. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE