Stannic Oxide Semiconductor Studies.
Final scientific rept.,
MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF ELECTRICAL ENGINEERING
Pagination or Media Count:
High quality stannic oxide epilayers were grown in TiO2 substrates without evidence of thermal mismatch. Electrical characterization was performed and device applications were studied. Stannic oxide appears to be suitable for high temperature microwave Schottky barrier field effect transistors. Author
- Solid State Physics