Studies of the Surface Electronic Structure and Chemistry of Si, Ge, and Other Solids
Final rept. 1 Jun 1974-30 Nov 1977
STANFORD UNIV CA STANFORD ELECTRONICS LABS
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The surface electronic structure and certain aspects of the surface chemistry of amorphous and crystalline Si and Ge as well as crystalline SrTiO3 ZnO, and Sn have been studied using photoemission spectroscopy and Auger electron spectroscopy. By examining the surface, valence, and core states a more detailed picture of the surface electronic structure and chemistry could be obtained than has been generally possible in the past. Of particular importance has been the use of Stanford Synchrotron Radiation Laboratory which has provided continuously tunable radiation from 10 to 300 eV. Using this capability, it is possible, for example, to examine the surface states and core levels as a gas is adsorbed. It has been found possible to adsorb oxygen on Si in such a way that the surface states are removed but the usual shift in the Si 2p core level associated with chemical bonding is missing. This indicates a new type of covalent bonding, previously unexpected. These results can give new insight into the kinetics of oxygen takeup on Si.
- Solid State Physics