Series-Connected Electron Bombarded Semiconductor Devices.
Final rept. Apr 76-Dec 77,
WATKINS-JOHNSON CO PALO ALTO CALIF
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During this program the design for a series-connected EBS device was completed and six of these devices were fabricated, burned-in, and delivered. Each device consisted of three basic sub-assemblies the electron gun, the beam deflection and rotation structure, and the target. The electron gun and beam deflection and rotation structure utilized designs previously developed at Watkins-Johnson Company. The target was modified from previous EBS designs to incorporate a target consisting of two groups of three series-connected diodes operated Class B. The six devices were supplied to USAECOM for use in evaluation and lifetesting of the series-connected diode techniques. In most previous EBS developmental work, amplifiers capable of high output power have used targets with multiple diodes connected in parallel. With this configuration, however, as the number of diodes in the array increases, the source impedance decreases, significantly complicating the problem of matching to a 50 ohm load. A series connection of the diodes, on the other hand, greatly simplifies the matching problem by virtue of the increased source impedance presented. Furthermore, the effective capacitance of an array of N series-connected diodes is reduced by a factor of 1N compared to the capacitance of a single diode. This, in turn, serves to increase the power bandwidth product of the device when matching to a high impedance load.
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