Bibliography of Breakdown Effects in Semiconductors.
Final rept. Mar-Oct 76,
BDM CORP ALBUQUERQUE N MEX
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The bibliographies presented in Appendices A and B of the subject report represent a Collection of technical documents and articles treating subjects related to conduction processes and failure mechanisms in bipolar semiconductors exposed to high amplitude electrical transients. The sources cited in Appendix B deal more directly with the failure phenomenology involved in the damage. Appendix A is divided into sections treating reverse bias processes and forward bias processes. Each of those sections is divided into parts for articles directly related to the topic, indirectly related to the topic, and peripherally related to the topic. Entries in each part are alphabetized according to author. Appendix B is divided into sections treating reverse bias failure, forward bias failure, interconnection failure, and general causes of failure. Each section includes separate parts for materials directly, indirectly, or peripherally related to the topic. Entries in each part are alphabetized according to author. Author
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