I/J Band Low-Cost Crossed-Field Amplifier.
Research and development technical rept. 28 Mar-28 Sep 77,
NORTHROP CORP DES PLAINES IL DEFENSE SYSTEMS DIV
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The effort in this program is directed toward the development of an IJ band linear format injected-beam crossed-field amplifier IBCFA for electronic warfare, capable of power output of 1000 W peak, 200 W average, between 8.5 and 17 GHz with 20 dB gain. A laser-cut shaped-substrate meander line will be used. Performance in an EF band IBCFA will be evaluated, for which the objective performance is 3.0 kW peak power output, 1.0 kW average power output in the 2-4 GHz band, also with 20 dB gain. In addition, a gun for IJ band is to be designed and evaluated. The most important part of this program is the development of technology of the combination of meander line, shaped substrate, and coexpansive ground plane. The shaped substrate concept, including the laser cutting approach, was originated by U. S. Army ERADCOM personnel. The substrate for the meander line is in a ladder configuration. The electrical properties of the ladder substrate with a meander line have been found to be little different from the meander substrate configuration. The substrate material is beryllia ceramic, which is necessary for good thermal conductivity. Laser cutting the substrates for both EF band and IJ band has met with limited success to date. The breakage rate is still high, especially for IJ band dimensions.
- Electrical and Electronic Equipment