Investigation of Solid-Solid Reactions in Metal Films on Silicon
Annual rept. 26 Apr 1976-1 May 1977
STANFORD RESEARCH INST MENLO PARK CA
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Investigations were conducted on solid-solid reactions in gold films evaporated on silicon substrates at deposition temperatures below the eutectic point 370 C. Both air- and vacuum-annealed structures were studied using correlated data from transmission electron microscopydiffraction TEMTED, Auger electron spectroscopy AES profiling, and forward current-voltage I-V measurements. Results of these experiments show that the grain size in Au films deposited or annealed at temperatures from 25 C to 200 C increases from 50 anstrom min to saturation size of approximately 1 micro m at temperatures greater than 150 C.
- Ceramics, Refractories and Glass
- Metallurgy and Metallography
- Solid State Physics