Accession Number:

ADA051170

Title:

Investigation of Solid-Solid Reactions in Metal Films on Silicon

Descriptive Note:

Annual rept. 26 Apr 1976-1 May 1977

Corporate Author:

STANFORD RESEARCH INST MENLO PARK CA

Personal Author(s):

Report Date:

1977-05-01

Pagination or Media Count:

31.0

Abstract:

Investigations were conducted on solid-solid reactions in gold films evaporated on silicon substrates at deposition temperatures below the eutectic point 370 C. Both air- and vacuum-annealed structures were studied using correlated data from transmission electron microscopydiffraction TEMTED, Auger electron spectroscopy AES profiling, and forward current-voltage I-V measurements. Results of these experiments show that the grain size in Au films deposited or annealed at temperatures from 25 C to 200 C increases from 50 anstrom min to saturation size of approximately 1 micro m at temperatures greater than 150 C.

Subject Categories:

  • Ceramics, Refractories and Glass
  • Metallurgy and Metallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE