# Accession Number:

## ADA050804

# Title:

## Surface Structure of Electron-Hole Drops in Germanium and Silicon.

# Descriptive Note:

## Final technical rept. 31 Oct 76-1 Nov 77,

# Corporate Author:

## CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF PHYSICS

# Personal Author(s):

# Report Date:

## 1977-11-01

# Pagination or Media Count:

## 62.0

# Abstract:

Density functional formalism of Hehenberg and Kohn HK is generalized for the case of a multicomponent plasma. Using the self-consistent Kohn-Sham KS equations for electrons and holes and local density approximation for exchange-correlation potential, one can investigate the surface characteristics of electron-hole liquid EHL in six configurations of Ge and Si. These configurations are denoted by Xnu sub e nu sub h, where X is either Ge or Si, and nu sub e and nu sub h are the number of occupied electron and hold bands, respectively. In normal Ge, i.e., Ge42, the value of surface tension, sigma, is found to be .00037 ergsq. cm. When Ge is subject to a uniform stress of about 3.5kgsq. mm along 111 direction, i.e., in Ge12, sigma is calculated to be .00010 ergsq. cm. Under a very large 111 uniaxial stress on Ge, i.e., Ge11, sigma is found to be a factor of twenty smaller than in Ge42.

# Descriptors:

# Subject Categories:

- Solid State Physics