X-Band Solid-State Module for Airborne Array Radar Applications.
Semiannual rept. 1 Apr-30 Sep 77,
RCA LABS PRINCETON N J
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This report describes the progress during the second six-month period of an 18-month research program to develop amplifier modules suitable for airborne, active array radar applications. Using GaAs FETs as the active device, the design goal of these amplifier modules is an output power of 5 W with 25-dB gain over the 9- to 10-GHz frequency band. Extensive characterization of the amplifiers during pulsed operation is also part of this program. It is projected that the amplifier module will be configured as a cascade of five balanced stages. To achieve high overall amplifier efficiency, the output power of the FETs will be tailored to each of the amplifier stages. In this report period, three new vapor-phase epitaxial reactors have been constructed under RCA support. Measurements show that excellent well-defined channel layers can be grown on buffer layers which are 1.0 micron or less in thickness using Reactor C. AuGe ohmic contact technology has been developed to the point of being compatible with the self-aligned gate process. The AuGe contacts have lower resistance, are truly ohmic compared to TiPtAu contacts, and should result in FETs with improved rf performance.
- Electrical and Electronic Equipment
- Active and Passive Radar Detection and Equipment