Radiation Characterization of Sequential Logic Circuits.
AIR FORCE WEAPONS LAB KIRTLAND AFB N MEX
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This report describes the test techniques for radiation characterizing medium and large-scale integration MSILSI sequential logic circuits where few internal nodes are available for testing. Four sequential logic devices, two transistor-transistor-logic TTL technology devices and two complementary-metal-oxide-silicon CMOS technology devices were characterized. The devices were characterized for gamma dose-rate logic upset, total gamma dose survivability, and neutron fluence survivability. The data has been analyzed to determine the applicability of the testing techniques and procedures. Author
- Electrical and Electronic Equipment
- Nuclear Radiation Shielding, Protection and Safety