Support of MX Electromagnetic Pulse Validation, Interim Report.
ARMY MISSILE RESEARCH AND DEVELOPMENT COMMAND REDSTONE ARSENAL AL ADVANCED SYSTEMS DEV/MFG TECH DIRECTORATE
Pagination or Media Count:
This interim report outlines the technical progress to date on the Electrical Overstress Program at the US Army Missile Research and Development Command. The program is aimed at providing a better theoretical model of the physics of second breakdown in junction bipolar diodes, transistors, and integrated circuits, and applying this information in the development of nondestructive screening techniques for eliminating device types and individual samples which are especially susceptible to high power pulses. The program features a continuation of Defense Nuclear Agency funded research using special silicon on sapphire diodes in which the effects of self-heating are directly observable, computer analysis and simulation of both conventional transistor and special silicon on sapphire diode behavior, and selection and measurement of electrical parameters required for prediction of overstress susceptibility. Author
- Electrical and Electronic Equipment