Epitaxial Growth of Semi-Insulating GaAs
Semi-Annual rept. 1 Jul-31 Dec 1977
DAVID SARNOFF RESEARCH CENTER PRINCETON NJ
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The objective of this program is to develop techniques for the vapor phase growth of high resistivity epitaxial layers of gallium arsenide on semi- insulating gallium arsenide substrates. A capability to grow such layers of high quality material with minimum structural defects and good surface quality for use as buffer layers prior to the growth of active layers for such devices as FETS and TELDS will eliminate the device performance problems caused by poor and inconsistent substrate quality.
- Solid State Physics