Accession Number:

ADA050030

Title:

Epitaxial Growth of Semi-Insulating GaAs

Descriptive Note:

Semi-Annual rept. 1 Jul-31 Dec 1977

Corporate Author:

DAVID SARNOFF RESEARCH CENTER PRINCETON NJ

Personal Author(s):

Report Date:

1977-12-31

Pagination or Media Count:

13.0

Abstract:

The objective of this program is to develop techniques for the vapor phase growth of high resistivity epitaxial layers of gallium arsenide on semi- insulating gallium arsenide substrates. A capability to grow such layers of high quality material with minimum structural defects and good surface quality for use as buffer layers prior to the growth of active layers for such devices as FETS and TELDS will eliminate the device performance problems caused by poor and inconsistent substrate quality.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE