Depth-Resolved Cathodoluminescence of Carbon Implanted Gallium Arsenide
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
Pagination or Media Count:
The effects of two caps, SiO2 and Si3N, are examined on Cr doped GaAs by means of depth resolved Cathodoluminescence. The GaAs samples had been implanted with C in fluences of 10 to the -13th powersq cm and 10 to the -14th powersq cm. Two of the samples differed only in the cap used. The energy shift in the carbon-carbon, donor-acceptor, recombination, and the free-bound, carbon acceptor transition peak are used to evaluate the carbon donor, and carbon acceptor concentrations. These concentrations are used to evaluate the effects of the caps. It is found that the carbon substitutes for both Ga and As and that the Si3N4 cap permits greater outdiffusion of As than the SiO2 cap and that the SiO2 cap permits greater outdiffusion of the Ga than does the Si3N4 cap.
- Solid State Physics