Accession Number:

ADA048848

Title:

Chemically Vapor Deposited Semi-Conductors for Laser and Infrared Window Applications

Descriptive Note:

Final technical rept. 15 May 1975-15 Nov 1976

Corporate Author:

RAYTHEON CO WALTHAM MA RESEARCH DIV

Personal Author(s):

Report Date:

1977-07-01

Pagination or Media Count:

70.0

Abstract:

The second part of this program has demonstrated the feasibility of depositing a microcrystalline form of gallium phosphide by a chemical vapor deposition process. Although close to theoretical transmittance was achieved between 5 and 12 micrometers, the material still contains residual pores that cause unacceptable scatter at visible wavelengths. Techniques were also developed to bond thin layers of this material to zinc selenide to form a composite window that withstands the mechanical abrasion of rain and particulate impacts better than other materials that are currently available. Further work is needed before an optimum bonding glass or mechanical attachment technique is developed. The first part of the program summarizes additional work performed on the chemical vapor deposition of cadmium telluride. In spite of the wider range of process conditions investigated with the elemental process, residual porosity reduces the transmittance to an unacceptable level. A chemical vapor deposition process that uses hydrogen telluride gas is apparently required to deposit laser quality material. The use of this gas will require, however, that improved forming and handling techniques be developed.

Subject Categories:

  • Laminates and Composite Materials
  • Optics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE