Accession Number:

ADA048781

Title:

Modeling of High Current Injection into Bipolar Semiconductors.

Descriptive Note:

Final rept.,

Corporate Author:

AIR FORCE WEAPONS LAB KIRTLAND AFB N MEX

Personal Author(s):

• Fuller,Edward O.

Report Date:

1977-10-01

Pagination or Media Count:

27.0

Abstract:

Two techniques were used in an attempt to solve the problem of high current injection into a bipolar semiconductor. The first technique was by finite differences, and the second was by the method of lines. Because of the physical model chosen for the system, neither method would converge. An extended bibliography is included. Author

Descriptors:

• *INJECTION
• *SEMICONDUCTOR DEVICES
• *ELECTRIC CURRENT
• *BIPOLAR SYSTEMS
• MATHEMATICAL MODELS
• ELECTROMAGNETIC FIELDS
• SOURCES
• COMPUTATIONS
• ELECTRON DENSITY
• HOLES(ELECTRON DEFICIENCIES)
• TRAPPING(CHARGED PARTICLES)
• FINITE DIFFERENCE THEORY
• SOLUTIONS(GENERAL)
• BOUNDARY VALUE PROBLEMS
• DIFFERENTIAL EQUATIONS
• MACHINE CODING
• ELECTROMAGNETIC PULSES
• BIPOLAR TRANSISTORS
• SIMULTANEOUS EQUATIONS

Subject Categories:

• Electrical and Electronic Equipment
• Electricity and Magnetism
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE