Accession Number:

ADA048738

Title:

A Radiation-Hard CMOS/SOS ALU,

Descriptive Note:

Corporate Author:

ROCKWELL INTERNATIONAL ANAHEIM CALIF AUTONETICS GROUP

Personal Author(s):

• Kjar,R. A.
• Martinez,M.
• Waskiewicz,A. E.

Report Date:

1977-10-05

Pagination or Media Count:

6.0

Abstract:

A radiation-hard CMOSSOS technology has been used to fabricate a complex LSI circuit containing over 2200 transistors. The circuit is an eight bit wide arithmetic and logic unit ALU slice. This paper describes the results of electrical, temperature, and radiation tests on the ALU circuit. An instruction cycle-time of less than 240 ns was achieved for nominal operation at 11V and 25 C. This time increases to 300 ns at 125 C. After irradiation to 1 mega rad. SI under bias, operation was degraded only slightly. The 25 C and 125 C postradiation cycle times were within 320 and 360 ns, respectively. Radiation tolerance from part to part and lot to lot excellent, thus demonstrating the applicability of radiation hard CMOSSOS to LSI circuitry. Author

Descriptors:

• *INTEGRATED CIRCUITS
• *COMPLEMENTARY METAL OXIDE SEMICONDUCTORS
• *RADIATION HARDENING
• LOGIC CIRCUITS
• ARITHMETIC UNITS

Subject Categories:

• Electrical and Electronic Equipment
• Nuclear Radiation Shielding, Protection and Safety
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE