Accession Number:

ADA048579

Title:

Manufacturing Methods and Technology Engineering High-Efficiency, High-Power Gallium Arsenide Read-Type IMPATT Diodes. Volume II.

Descriptive Note:

Final rept. 30 Jun 75-30 Jun 77,

Corporate Author:

RAYTHEON CO WALTHAM MASS SPECIAL MICROWAVE DEVICES

Personal Author(s):

• Chalifour,H. R.
• Steele,S. R.

Report Date:

1977-06-30

Pagination or Media Count:

161.0

Abstract:

This volume includes all of the process specifications for the High-Power, High-Efficiency Gallium-Arsenide IMPATT Diode. The detailed process sheets are grouped in accordance with the particular process area where they are used. A flow chart for each group shows the interrelationship of operations. Applicable drawings are also included in Section II.

Descriptors:

• *MANUFACTURING
• *MICROWAVE EQUIPMENT
• *IMPATT DIODES
• *MICROWAVE OSCILLATORS
• HIGH POWER
• SPECIFICATIONS
• GALLIUM ARSENIDES
• EFFICIENCY
• FABRICATION
• EPITAXIAL GROWTH
• SUBSTRATES
• ETCHING
• WAFERS
• SCHOTTKY BARRIER DEVICES
• PHOTOLITHOGRAPHY
• DRAWING(FORMING)
• METALLIZING

Subject Categories:

• Electrical and Electronic Equipment
• Fabrication Metallurgy
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE