Accession Number:

ADA048578

Title:

Manufacturing Methods and Technology Engineering High-Efficiency, High-Power Gallium Arsenide Read-Type IMPATT Diodes. Volume I.

Descriptive Note:

Final rept. 30 Jun 75-30 Jun 77,

Corporate Author:

RAYTHEON CO WALTHAM MASS SPECIAL MICROWAVE DEVICES

Personal Author(s):

• Chalifour,H. R.
• Steele,S. R.

Report Date:

1977-08-01

Pagination or Media Count:

187.0

Abstract:

A design review of Read profile IMPATT diodes is presented. Work performed on this program to achieve the target specifications for high power X-band and Ku-band diodes is summarized. This includes development of specifications, processes, and characterization techniques for the Gallium Arsenide epitaxial wafer, as well as assembly and test procedures for the diode. Areas of investigation included epitaxial wafer growth processes, methods of controlling layer axial and radial uniformity, and techniques for testing the completed wafer. Schottky-barrier metallization and dimensional control techniques during plating, lapping and etching were the principal areas of investigation in the dice processing area. Several novel techniques were applied to the manufacturing processes to improve the production rates of Read IMPATT diodes. This included spray dicing of the wafers, and new thermal resistance and noise measuring techniques. Environmental test results are summarized, including storage and operating life test results during the program and on the final production units. Author

Descriptors:

• *MICROWAVE EQUIPMENT
• *IMPATT DIODES
• *MICROWAVE OSCILLATORS
• HIGH POWER
• GALLIUM ARSENIDES
• EPITAXIAL GROWTH
• ETCHING
• WAFERS
• SCHOTTKY BARRIER DEVICES
• X BAND
• HEAT SINKS
• PLATING
• KU BAND
• METALLIZING
• PRECISION FINISHING

Subject Categories:

• Electrical and Electronic Equipment
• Fabrication Metallurgy
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE