Accession Number:

ADA048563

Title:

Mechanisms of Semiconductor Junction Burnout.

Descriptive Note:

Topical rept. Aug 75-Aug 76,

Corporate Author:

MISSION RESEARCH CORP LA JOLLA CA

Personal Author(s):

Report Date:

1976-08-01

Pagination or Media Count:

54.0

Abstract:

Mechanisms of semiconductor junction burnout are reviewed with particular emphasis on parameters controlling variation in energy to achieve second breakdown and device damage. Stabilizing effects promoting uniform current distribution and destabilizing effects promoting filamentary currents are identified. Those destabilizing factors involving thermal changes lead to thermal-mode second breakdown. They include the resistivity peak and reverse saturation current. A nonthermal destabilizing effect at high injection conditions leads to current-mode second breakdown. The dominant mode depends on device parameters and the current level. A minimum energy needed to achieve damage can be estimated for each destabilizing mechanism from mechanisms knowledge. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Test Facilities, Equipment and Methods
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE