Accession Number:

ADA048483

Title:

Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices

Descriptive Note:

Semi-annual technical rept. 17 Nov 1976-16 May 1977

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Report Date:

1977-09-01

Pagination or Media Count:

125.0

Abstract:

The enclosed papers discuss the trapped hole location and annihilation in Si, current and C-V instabilities in SiO2 at high fields, annealing of neutral electron traps in irradiated oxides, Al implanted into the SiO2 layer of MOS structures, electron trapping as a result of Al implantation, the initial oxidation regime of silicon oxidation and the electronic structure of SiO2, SixGe1-xO2, GeO2.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE