Accession Number:

ADA048466

Title:

Epitaxial Growth of Semi-Insulating GaAs

Descriptive Note:

Quarterly status rept. no. 1, 1 Jul-30 Sep 1977

Corporate Author:

DAVID SARNOFF RESEARCH CENTER PRINCETON NJ

Personal Author(s):

Report Date:

1977-09-30

Pagination or Media Count:

14.0

Abstract:

The objective of this program is to develop techniques for the vapor phase growth of high resistivity epitaxial layers of gallium arsenide on semi- insulating gallium arsenide substrates. A capability to grow such layers of high quality material with minimum structural defects and good surface quality for use as buffer layers prior to the growth of active layers for such devices as FETs and TELDs will eliminate the device performance problems caused by poor and inconsistent substrate quality. A vapor phase reactor together with its associated gas control system has been constructed which will enable the experimental growth techniques envisaged for this program to be carried out. Preliminary test runs have been performed in order to check the system performance under normal operating conditions. That is to determine reactor performance regarding quality and characteristics of the material it can grow before attempting the growth of high resistivity material.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE