Accession Number:

ADA048261

Title:

Solid Phase Epitaxial Growth.

Descriptive Note:

Annual progress rept. 1 May 76-30 Apr 77,

Corporate Author:

HUGHES RESEARCH LABS MALIBU CALIF

Personal Author(s):

Report Date:

1977-10-01

Pagination or Media Count:

47.0

Abstract:

Low-temperature epitaxial growth of Si by the solid-phase epitaxy SPE process has been studied to determine the effects of contaminants upon the growth process. The major sources of process-induced contaminants in SPE have been reviewed, and methods for eliminating or minimizing these have been developed. We show that under clean conditions an evaporated amorphous Si film will crystallize epitaxially on a Si100 substrate when heated to 525 C, but that the growth is very sensitive to inhibition by atmospheric contaminants. Similarly, SPE growth in the system SiPd2SiSiA has been found to proceed very differently under clean conditions as compared to the standard processing used in previous work. This difference is tentatively attributed to affects of contaminants on the Pd2Si interlayer, not on the Sia film as was previously believed. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE