Study of HgCdTe MIS Technology.
SANTA BARBARA RESEARCH CENTER GOLETA CALIF
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Metal-insulator-semiconductor MIS devices were fabricated on single-crystal HgCdTe with both 5-micrometer and 12-micrometer cutoff wavelengths. The purpose was to evaluate existing technology and identify fundamental limitations, for the application of HgCdTe to monolithic intrinsic focal plane arrays. For 12-micormeter material it was shown that interband tunneling provides such a large dark current that a MIS device cannot store charge effectively. Author
- Infrared Detection and Detectors
- Solid State Physics