Accession Number:

ADA048224

Title:

Study of HgCdTe MIS Technology.

Descriptive Note:

Final rept.,

Corporate Author:

SANTA BARBARA RESEARCH CENTER GOLETA CALIF

Personal Author(s):

Report Date:

1977-11-15

Pagination or Media Count:

82.0

Abstract:

Metal-insulator-semiconductor MIS devices were fabricated on single-crystal HgCdTe with both 5-micrometer and 12-micrometer cutoff wavelengths. The purpose was to evaluate existing technology and identify fundamental limitations, for the application of HgCdTe to monolithic intrinsic focal plane arrays. For 12-micormeter material it was shown that interband tunneling provides such a large dark current that a MIS device cannot store charge effectively. Author

Subject Categories:

  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE