Theory of Bound States Associated with n-Type Inversion Layers on Silicon.
CALIFORNIA UNIV IRVINE DEPT OF PHYSICS
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The ground state and two excited states of an electron bound to a charged impurity located at the interface between silicon and silicon dioxide have been investigated. The interface was taken to be parallel to a 001 plane and a static electric field p perpendicular to the surface was assumed. Calculations of the electron binding energies as functions of electric field were made for a bare charged impurity with screening by free carriers neglected. It was found that the binding energy increases with electric field and approaches that of the corresponding state of a two-dimensional hydrogen-like atom in the limit of infinite electric field. The case where the impurity is located within the oxide has also been investigated. Author
- Solid State Physics