Accession Number:

ADA048216

Title:

Theory of Bound States Associated with n-Type Inversion Layers on Silicon.

Descriptive Note:

Interim rept.,

Corporate Author:

CALIFORNIA UNIV IRVINE DEPT OF PHYSICS

Personal Author(s):

Report Date:

1977-11-01

Pagination or Media Count:

18.0

Abstract:

The ground state and two excited states of an electron bound to a charged impurity located at the interface between silicon and silicon dioxide have been investigated. The interface was taken to be parallel to a 001 plane and a static electric field p perpendicular to the surface was assumed. Calculations of the electron binding energies as functions of electric field were made for a bare charged impurity with screening by free carriers neglected. It was found that the binding energy increases with electric field and approaches that of the corresponding state of a two-dimensional hydrogen-like atom in the limit of infinite electric field. The case where the impurity is located within the oxide has also been investigated. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE