Accession Number:

ADA048037

Title:

Radiation Effects on A1GaAs/GaAs Solar Cells Using 0.9-3.0 MeV Protons and 1.0-1.4 MeV Electrons.

Descriptive Note:

Technical rept. 1 Jan-31 Dec 76,

Corporate Author:

ROME AIR DEVELOPMENT CENTER GRIFFISS AFB N Y

Report Date:

1977-09-01

Pagination or Media Count:

33.0

Abstract:

Aluminum gallium arsenide solar cells were irradiated with 1.0 and 1.4 MeV electrons, and with 0.9 and 3.0 MeV protons to determine radiation sensitivity. Electron fluences ranged from 1 x 10 to the 14th power to 3 x 10 to the 16 power electrons, 1 sq cm, and proton fluences from 5 x 10 to the 10 power to 2.7 x 10 to the 12th powersqcm. A solar simulator and a tungsten lamp were used to evaluate changes in the current-voltage characteristics curves. In most cases, AlGaAs solar cells showed a greater resistance to radiation than silicon cells.

Subject Categories:

  • Electric Power Production and Distribution

Distribution Statement:

APPROVED FOR PUBLIC RELEASE