Radiation Effects on A1GaAs/GaAs Solar Cells Using 0.9-3.0 MeV Protons and 1.0-1.4 MeV Electrons.
Technical rept. 1 Jan-31 Dec 76,
ROME AIR DEVELOPMENT CENTER GRIFFISS AFB N Y
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Aluminum gallium arsenide solar cells were irradiated with 1.0 and 1.4 MeV electrons, and with 0.9 and 3.0 MeV protons to determine radiation sensitivity. Electron fluences ranged from 1 x 10 to the 14th power to 3 x 10 to the 16 power electrons, 1 sq cm, and proton fluences from 5 x 10 to the 10 power to 2.7 x 10 to the 12th powersqcm. A solar simulator and a tungsten lamp were used to evaluate changes in the current-voltage characteristics curves. In most cases, AlGaAs solar cells showed a greater resistance to radiation than silicon cells.
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