Accession Number:

ADA046297

Title:

Studies of Extrinsic Silicon Infrared Detectors.

Descriptive Note:

Final rept. 1 Apr 72-30 Mar 77,

Corporate Author:

ILLINOIS UNIV AT URBANA-CHAMPAIGN DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1977-08-01

Pagination or Media Count:

87.0

Abstract:

Studies of the material parameters which limit the performance of silicon extrinsic infrared detectors are reported. These parameters include the carrier mobilities and the thermal, optical and Auger-impact generation-recombination-trapping rates at impurity and defect centers and impurity-defect complexes. The transient capacitance methods have been used to obtain these material characterization parameters as well as the generation annealing-diffusion kinetics of the centers. The transient capacitance methods are refined to give concentration profiles of recombination centers. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE