Studies of Extrinsic Silicon Infrared Detectors.
Final rept. 1 Apr 72-30 Mar 77,
ILLINOIS UNIV AT URBANA-CHAMPAIGN DEPT OF ELECTRICAL ENGINEERING
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Studies of the material parameters which limit the performance of silicon extrinsic infrared detectors are reported. These parameters include the carrier mobilities and the thermal, optical and Auger-impact generation-recombination-trapping rates at impurity and defect centers and impurity-defect complexes. The transient capacitance methods have been used to obtain these material characterization parameters as well as the generation annealing-diffusion kinetics of the centers. The transient capacitance methods are refined to give concentration profiles of recombination centers. Author
- Electrical and Electronic Equipment
- Infrared Detection and Detectors
- Solid State Physics