256-Element Schottky-Barrier IR-CCD Line Sensor.
Final rept. 1 Jun 76-31 Mar 77,
RCA LABS PRINCETON N J
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A 256-element platinum silicide Schottky-barrier IR-CCD line sensor and a waveform generator for operating this device was developed. The IR line sensor device was designed with dual CCD-output registers to facilitate either the moving-target indicator or background-subtraction mode of operation. The platinum silicide Schottky-barrier detectors with implanted n-type guard rings are integrated on-chip with double-polysilicon, buried-channel, 2-phase CCD output registers. At 77 K the buried-channel CCD output registers had a measured charge-transfer loss of .00005 per transfer. The Schottky-barrier detectors are designed for operation in a continuous-charge-skimming mode that results in a very low leakage current density which was measured as 1400 micro Arpsq cm. Acm2 at 77 K. The quantum efficiency coefficient C1 of the platinum silicide Schottky-barrier detectors was estimated to be 0.1, and detector-to-detector response uniformity of 8 maximum peak-to-peak, or about 1.2 rms, was measured. Author
- Electrooptical and Optoelectronic Devices
- Infrared Detection and Detectors
- Solid State Physics