Nonreflecting Vertical Junction Silicon Solar Cell Optimization.
Interim rept. May 76-May 77,
SOLAREX CORP ROCKVILLE MD
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This work on nonreflective vertical-junction silicon solar cells has resulted in high conversion efficiency radiation resistant solar cells. New techniques of oxidation growth and the use of photolothography enable the use of an orientation dependent etch to produce grooves 5-10 microns wide and over 100 microns deep. These silicon wafers have been processed into solar cells with all of the processes performed at temperatures compatible with producing high efficiency solar cells. A theoretical calculation of the generated current for the vertical junction structure was performed. It indicates the decreased dependence on carrier diffusion length and, therefore, the reduced effect of radiation damage on collection efficiency for vertical junction solar cells. Vertical junction solar cells 2 cm x 2 cm in size have been fabricated with AMO conversion efficiencies greater than 13. These cells have shown superior radiation resistance. Author
- Electrical and Electronic Equipment
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