Use of Trichloroethylene for Charge Control in MOS Oxides.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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A fabrication facility for the preparation of TrichloroethyleneOxide TCEO2 over the temperature range of 850 C - 1200 C is described. The TCE02 oxide films obtained were of good quality, and uniform in the thickness range of 150-1500 angstrom. Electrical parameters such as Qss and Qo, were found to be at acceptable levels communsurate with values normally obtained in hydrochloric acid grown oxides or ultra-clean thermally grown oxides. Author
- Organic Chemistry
- Solid State Physics