Accession Number:

ADA045714

Title:

Use of Trichloroethylene for Charge Control in MOS Oxides.

Descriptive Note:

Technical rept.,

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Personal Author(s):

Report Date:

1977-08-01

Pagination or Media Count:

15.0

Abstract:

A fabrication facility for the preparation of TrichloroethyleneOxide TCEO2 over the temperature range of 850 C - 1200 C is described. The TCE02 oxide films obtained were of good quality, and uniform in the thickness range of 150-1500 angstrom. Electrical parameters such as Qss and Qo, were found to be at acceptable levels communsurate with values normally obtained in hydrochloric acid grown oxides or ultra-clean thermally grown oxides. Author

Subject Categories:

  • Organic Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE