Accession Number:

ADA045651

Title:

Advanced Archival Memory

Descriptive Note:

Quarterly rept. no. 1, 15 Apr-15 Jul 1976

Corporate Author:

GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY

Report Date:

1977-07-01

Pagination or Media Count:

339.0

Abstract:

During this reporting period, effort in the archival memory program included experimental work and theoretical studies on a planar diode structure memory target substrate, implantation of ions to write information on a planar diode structure, feasibility studies of the alloy junction method of writing, and the specification of a high performance electron beam write station for alloy junction writing. A detailed analytical modeling study was initiated in order to properly design the planar diode and to understand the results of experimental testing. The initial model design was used during the period to compare test results with theory and define new processing experiments. An improved method of ion writing using inert ions to form damage sites was shown to be feasible. Preliminary results indicate a lower writing fluence will be required. Alloy junction diodes were formed using a laser beam. Diodes as small as 5 microns were formed.

Subject Categories:

  • Computer Hardware
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE